inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1044 description high dc current gain : h fe = 700(min.)@ i c = 1a, v ce = 4v high collector-emitter breakdown voltage- : v (br) ceo = 80v(min) wide area of safe operation applications designed for high power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v cer collector-emitter voltage 100 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 6 v i c collector current-continuous 6 a i b b base current- continuous 3 a p c collector power dissipation @t c =25 60 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1044 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v cer collector-emitter breakdown voltage i c = 50ma, r be = 1k 100 v v (br)ceo collector-emitter breakdown voltage i c = 50ma, i b = 0 80 v v ce (sat) collector-emitter saturation voltage i c = 3a, i b = 30ma b 1.7 v i cbo collector cutoff current v cb = 100v, i e = 0 10 a i ebo emitter cutoff current v eb = 6v; i c = 0 10 ma h fe dc current gain i c = 1a; v ce = 4v 700 10000 ? h fe classifications q p o 700-2500 2000-5000 4000-10000 isc website www.iscsemi.cn
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